Photoluminescence and the band structure of InAsSb strained-layer superlattices
- 18 July 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (3) , 216-218
- https://doi.org/10.1063/1.100135
Abstract
Infrared photoluminescence measurements were performed on InAs0.13Sb0.87 /InSb strained-layer superlattices. In thick layered structures we observed very low energy transitions proving that a type II superlattice occurs in the InAsSb system. Band structures were calculated based on estimates of the band offsets and strain shifts obtained from the photoluminescence data.Keywords
This publication has 11 references indexed in Scilit:
- Extended infrared response of InAsSb strained-layer superlatticesApplied Physics Letters, 1988
- Long-wavelength photoluminescence of InAs1−xSbx (0<x<1) grown by molecular beam epitaxy on (100) InAsApplied Physics Letters, 1988
- Molecular beam epitaxial growth and optical properties of InAs1−xSbx in 8–12 μm wavelength rangeApplied Physics Letters, 1987
- Probing Semiconductor-Semiconductor InterfacesPhysics Today, 1987
- Electronic states in semiconductor heterostructuresIEEE Journal of Quantum Electronics, 1986
- Band Lineups at II-VI Heterojunctions: Failure of the Common-Anion RulePhysical Review Letters, 1986
- InAsSb strained-layer superlattices for long wavelength detector applicationsJournal of Vacuum Science & Technology B, 1984
- Developments in high pressure physicsContemporary Physics, 1977
- Valence-Band Parameters in Cubic SemiconductorsPhysical Review B, 1971
- Intrinsic Piezobirefringence in GaSb, InAs, and InSbPhysical Review B, 1971