Probing Semiconductor-Semiconductor Interfaces

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Abstract
Almost every aspect of modern life is affected by a practical result of research in condensed matter physics: semiconductor devices. The performance of these solid‐state devices is determined largely by the physical properties of the interfaces within them. It is the properties of interfaces in rectifying metal‐semiconductor junctions, ohmic contacts, metal‐oxide‐semiconductor structures and p‐n junctions, for example, that determine the performance of such devices as infrared detectors, microwave amplifiers, computer processors and laser diodes, respectively.