RF saturation mechanism of InP/InGaAs uni-travelling-carrierphotodiode
- 13 April 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (8) , 750-751
- https://doi.org/10.1049/el:20000555
Abstract
A study into the RF output power limit for an InP/InGaAs uni-travelling-carrier photodiode (UTC-PD) is presented. The measured 1 dB compression power of a UTC-PD at 40 GHz was found to be as high as 9 dBm. From the bias voltage dependence of the saturation power, it was found that the space charge effect in the collector layer is mainly responsible for the RF saturation.Keywords
This publication has 3 references indexed in Scilit:
- 40-Gbit/s TDM transmission technologies based on ultra-high-speed ICsIEEE Journal of Solid-State Circuits, 1999
- Chirp-compensated 40 GHz semiconductor modelockedlasers integrated with chirped gratingsElectronics Letters, 1998
- Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier InjectionJapanese Journal of Applied Physics, 1998