Anomalous dielectric behaviour in a-GaxTe100−x alloys (0⩽x⩽10)
- 1 November 1999
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 271 (1-4) , 125-135
- https://doi.org/10.1016/s0921-4526(99)00221-5
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Effect of indium impurities on the electrical properties of amorphous Ga30Se70Journal of Physics: Condensed Matter, 1992
- X‐ray K‐absorption edge studies in a‐Ga30Se70 and a‐Ga30Se70 − xInxX-Ray Spectrometry, 1992
- Growth of wide band gap polycrystalline semi-insulating polycrystalline siliconJournal of Vacuum Science & Technology B, 1990
- Dielectric Behavior of Hot‐Pressed AlN Ceramic: Effect of CaO AdditiveJournal of the Electrochemical Society, 1989
- Spectroscopy of delayed electronic transitions in GaAs Schottky diodesSemiconductor Science and Technology, 1987
- The physical origin of negative capacitanceJournal of the Chemical Society, Faraday Transactions 2: Molecular and Chemical Physics, 1986
- Errors due to lack of contact in measurements of dielectric relaxation parameters for solid powdersPhysica Status Solidi (a), 1981
- States in the gap and recombination in amorphous semiconductorsPhilosophical Magazine, 1975
- Conduction in non-crystalline systems IX. the minimum metallic conductivityPhilosophical Magazine, 1972
- Conduction in non-Crystalline systemsPhilosophical Magazine, 1970