Thermodynamic Study of the Transport and Epitaxial Growth of GaAs in an Open Tube
- 1 November 1968
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 7 (11)
- https://doi.org/10.1143/jjap.7.1324
Abstract
A theory based on a thermodynamic analysis is developed and compared with experimental results obtained for transport and epitaxial growth of GaAs in GaAs-AsCl3-H2 system. The transport rate of source GaAs and the growth rate of epitaxial layers are discussed as a function of the hydrogen flow rate, the source and substrate temperatures, the mole ratio of Cl2/H2, the reaction time and the substrate orientation. A reasonable agreement is found between the theory and experimental results except the effect of the substrate orientation on growth rate.Keywords
This publication has 10 references indexed in Scilit:
- Vapor Transport Thermodynamics of GaP-Cl2-H2 System in an Open TubeJapanese Journal of Applied Physics, 1967
- Thermodynamic Study of the Growth Rate of Epitaxial GaAs by GaAs/AsCl3/H2 SystemJapanese Journal of Applied Physics, 1967
- Epitaxial Growth of Doped and Pure GaAs in an Open Flow SystemJournal of the Electrochemical Society, 1965
- Synthesis of GaAs by Vapor Transport ReactionJournal of the Electrochemical Society, 1965
- The Transport of Gallium Arsenide in the Vapor Phase by Chemical ReactionJournal of the Electrochemical Society, 1964
- Preparation of GaAs[sub x]P[sub 1−x] by Vapor Phase ReactionJournal of the Electrochemical Society, 1964
- Growth Rates of Epitaxial Gallium ArsenideJournal of the Electrochemical Society, 1963
- Vapor Growth of Gallium ArsenideJournal of the Electrochemical Society, 1961
- Boron Diffusion in SiliconJournal of the Electrochemical Society, 1961
- Preparation of Crystals of InAs, InP, GaAs, and GaP by a Vapor Phase ReactionJournal of the Electrochemical Society, 1959