Electronic Charge Densities and the Temperature Dependence of the Forbidden (222) Reflection in Silicon and Germanium
- 25 November 1974
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 33 (22) , 1339-1342
- https://doi.org/10.1103/physrevlett.33.1339
Abstract
Using nonlocal pseudopotentials for silicon and germanium we are able to calculate the temperature dependence of the forbidden (222) reflection and we find it to be in excellent agreement with experiment. The accuracy of the pseudocharge density for the case of silicon is also examined and found to be in good agreement with recent x-ray experimental results.Keywords
This publication has 13 references indexed in Scilit:
- Diffraction studies of the (222) reflection in Ge and Si: Anharmonicity and the bonding electronPhysical Review B, 1974
- High-Resolution Band Structure and thePeak in GePhysical Review Letters, 1973
- The electron distribution in silicon - II. Theoretical interpretationProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1973
- The electron distribution in silicon - I. ExperimentProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1973
- Absolute measurement of structure factors of Si by using X-ray Pendellösung and interferometry fringesActa Crystallographica Section A, 1972
- Anharmonicity and the temperature dependence of the forbidden (222) reflection in siliconPhysics Letters A, 1971
- Temperature Dependence of the Wavelength-Modulation Spectra of GaAsPhysical Review Letters, 1970
- Anharmonic vibration and forbidden reflexions in silicon and germaniumProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1967
- Absolute Measurement of Structure Factors of Si Single Crystal by Means of X-Ray Pendellösung FringesJournal of the Physics Society Japan, 1965
- Vibrational Amplitudes in Germanium and SiliconPhysical Review B, 1962