Use of germanium interfacial layer for the hetero-epitaxial growth of CdTe on Si substrates
- 1 April 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 138 (1-4) , 43-47
- https://doi.org/10.1016/0022-0248(94)90777-3
Abstract
No abstract availableKeywords
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