Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100)
- 30 October 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (18) , 1879-1881
- https://doi.org/10.1063/1.102159
Abstract
CdTe has been grown on Si(100) by molecular beam epitaxy. Two orientations can be obtained: (111)B CdTe when the CdTe is deposited directly on the Si(100) substrates, and (100)CdTe when an intermediate layer of ZnTe is grown first. The (111)B oriented layers are made of two domains which are rotated by 90°. A layer with only one domain can be grown on Si(100) misoriented by 8°, but the best misorientation for this purpose still needs to be found. These layers were characterized by reflection high-energy electron diffraction, photoluminescence spectroscopy, scanning electron microscopy, and x-ray diffraction. Hg1−xCdxTe has also been grown by molecular beam epitaxy on (111)B CdTe on Si(100).Keywords
This publication has 13 references indexed in Scilit:
- Long and middle wavelength infrared photodiodes fabricated with Hg1−x CdxTe grown by molecular-beam epitaxyJournal of Applied Physics, 1989
- Effects of misfit dislocations and thermally induced strain on the film properties of heteroepitaxial GaAs on SiJournal of Applied Physics, 1988
- Characteristics of p-n junctions fabricated on Hg1−xCdxTe epilayers grown by molecular beam epitaxyApplied Physics Letters, 1988
- Molecular beam epitaxial growth of high structural perfection CdTe on Si using a (Ca,Ba)F2 buffer layerApplied Physics Letters, 1986
- Physical properties of CdTe grown on Si by low pressure metalorganic chemical vapour depositionJournal of Crystal Growth, 1986
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- Characteristics of CdTe grown on Si by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Optoelectronic properties of Cd1−xZnxTe films grown by molecular beam epitaxy on GaAs substratesApplied Physics Letters, 1985
- Growth of CdTe films on silicon by molecular beam epitaxyJournal of Applied Physics, 1983
- Latest developments in the growth of CdxHg1−xTe and CdTe–HgTe superlattices by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1983