Characteristics of p-n junctions fabricated on Hg1−xCdxTe epilayers grown by molecular beam epitaxy

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Abstract
p‐n junctions have been fabricated, using the ion implantation technique, on a Hg1−xCdxTe epilayer grown by molecular beam epitaxy (MBE) on a CdTe(111)B substrate. These junctions have been made on as‐grown p‐type layers, 12 μm thick. The layer (x=0.34) exhibits at 77 K a hole mobility of 800 cm2 V−1 s−1 and a carrier concentration of 3.6×1015 cm−3. The diode dark currents in the diffusion regime and the spectral response attest to the excellent uniformity in composition of the layer. We have also established that in the diffusion regime the data can be explained by the ideal diode equation with electrical parameters measured on the as‐grown MBE layers. We consider this an important step in the understanding of the relationship between material parameters and device performance.