Physical properties of CdTe grown on Si by low pressure metalorganic chemical vapour deposition
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3) , 475-479
- https://doi.org/10.1016/0022-0248(86)90339-8
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Characteristics of CdTe grown on Si by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1986
- DLTS Study on the Gradation of the Trap Concentration Profiles in n-CdTe CrystalsJapanese Journal of Applied Physics, 1985
- The growth and characterization of CdTe epitaxial layers on CdTe and InSb by metalorganic chemical vapor depositionJournal of Applied Physics, 1985
- Photoluminescence of CdTe grown on (001) InSb by molecular beam epitaxyJournal of Applied Physics, 1984
- High quality epitaxial films of CdTe on sapphireJournal of Applied Physics, 1984
- Growth of CdTe films on silicon by molecular beam epitaxyJournal of Applied Physics, 1983
- Effects of Cd-vapor and Te-vapor heat treatments on the luminescence of solution-grown CdTe:InJournal of Applied Physics, 1982
- Molecular beam epitaxy of II–VI compounds: CdTeJournal of Crystal Growth, 1981
- Photoluminescence and recombination centers in phosphorus-doped and undoped CdTe heat-treated under component vapour pressuresJournal of Luminescence, 1980
- Edge and Donor-Acceptor Pair Emissions in Cadmium TellurideJapanese Journal of Applied Physics, 1973