Effect of strain on ZnSe/AlGaInP heterostructures grown by MOVPE
- 1 January 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 99 (1-4) , 418-421
- https://doi.org/10.1016/0022-0248(90)90555-y
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Y-Line Emission and Lattice Relaxation in MBE-ZnSe and -ZnSSe on GaAsJapanese Journal of Applied Physics, 1989
- Improvement of Solar Cell Performance Using Plasma-Deposited Silicon Nitride Films with Variable Refractive IndicesJapanese Journal of Applied Physics, 1988
- Low-loss short-wavelength optical waveguides using ZnSe-ZnS strained-layer superlatticesApplied Physics Letters, 1988
- Selectively embedded epitaxial growth of ZnSe by low-pressure MOCVD using dimethylzinc and dimethylseleniumJournal of Crystal Growth, 1988
- GaAlAs laser diodes with metalorganic chemical vapor deposition grown ZnSe layer for injection blocking and optical confinementApplied Physics Letters, 1987
- AlGaInP double heterostructure visible-light laser diodes with a GaInP active layer grown by metalorganic vapor phase epitaxyIEEE Journal of Quantum Electronics, 1987
- Comparison of MOCVD-Grown with Conventional II-VI Materials Parameters for EL Thin Films)Physica Status Solidi (a), 1984