Model for resonant intensity dependence of photorefractive two-wave mixing in InP:Fe
- 15 December 1989
- journal article
- Published by Optica Publishing Group in Optics Letters
- Vol. 14 (24) , 1362-1364
- https://doi.org/10.1364/ol.14.001362
Abstract
We present a new model, which incorporates both temperature and electron–hole effects, for two-beam coupling in photorefractive semiconductors under an external dc field E0. We show that the exponential gain Γ exhibits an intensity-dependent resonance. The application of this model to InP:Fe allows us to predict a value of Γ near 20 cm−1 for a thin sample at 1.06 μm with E0 = 10 kV/cm.Keywords
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