Characterization of the photorefractive effect in InP:Fe by using two-wave mixing under electric fields
- 1 August 1988
- journal article
- Published by Optica Publishing Group in Optics Letters
- Vol. 13 (8) , 657-659
- https://doi.org/10.1364/ol.13.000657
Abstract
The dependence of a two-beam coupling gain on the grating period in Fe-doped InP is characterized. I measure gains as large as 4 cm−1 at 1.06 μm for an applied field of 8 kV cm−1 and for a grating period between 3 and 12 μm. Moreover, there is gain saturation above a reference-beam intensity of 40 mW cm−2 and response times from 1 to 30 msec depending on the applied field.Keywords
This publication has 9 references indexed in Scilit:
- Measurement of two-wave mixing gain in GaAs with a moving gratingOptics Communications, 1987
- Investigation of the photorefractive behavior of chrome-doped GaAs by using two-beam couplingOptics Letters, 1986
- Picosecond photorefractive beam coupling in GaAsOptics Letters, 1986
- Photorefractive four-wave mixing in GaAs using diode lasers operating at 13 μmApplied Optics, 1986
- Two-beam coupling in photorefractive Bi12SiO20 crystals with moving grating: Theory and experimentsJournal of Applied Physics, 1985
- Beam coupling in undoped GaAs at 106 μm using the photorefractive effectOptics Letters, 1984
- Four-wave mixing in semi-insulating InP and GaAs using the photorefractive effectApplied Physics Letters, 1984
- Diffraction efficiency and energy transfer in two-wave mixing experiments with Bi12SiO20 crystalsApplied Physics A, 1981
- Holographic storage in electrooptic crystals. i. steady stateFerroelectrics, 1978