Origin of the efficient light emission from inversion domain boundaries in GaN
- 24 February 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (8) , 1182-1184
- https://doi.org/10.1063/1.1554776
Abstract
Intentionally produced inversion domain boundaries in GaN have been reported to be highly efficient shallow recombination centers. This letter report a rationale for this phenomenon based on ab initio density-functional calculations. A model is also proposed, based on the existence of polarization in GaN, of the observation that a domain boundary acts as a rectifying junction under voltage applied between the two opposite-polarity surfaces.Keywords
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