Origin of the efficient light emission from inversion domain boundaries in GaN

Preprint

9 October 2002

preprint
Published by arXiv in arXiv

Abstract

Intentionally-produced inversion domain boundaries in GaN have been reported to be highly efficient recombination centers. Here I report a rationale for this phenomenon based on ab initio density-functional calculations. I also propose a model, based on the existence of polarization in GaN, of the observation that a domain boundary acts as a rectifying junction under voltage applied between the two opposite-polarity surfaces.

Keywords

DENSITY FUNCTIONAL CALCULATIONS
INVERSION DOMAIN BOUNDARIES
LIGHT EMISSION
RECOMBINATION
INTENTIONALLY
POLARIZATION
AB INITIO
GAN

All Related Versions

Version 1, 2002-10-09, ArXiv
Version 2, 2002-10-11, ArXiv
Published version: Applied Physics Letters, 82 (8), 1182.

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