Electron and hole traps in N-GaAs crystals
- 1 October 1976
- journal article
- letter
- Published by Springer Nature in Applied Physics A
- Vol. 11 (2) , 187-189
- https://doi.org/10.1007/bf00920603
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Depth profile of concentration of deep-level impurities in vapor-phase epitaxial gallium-arsenide grown under various arsenic vapor pressuresJournal of Applied Physics, 1973
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