Current-doubling, chemical etching and the mechanism of two-electron reduction reactions at GaAs
- 1 November 1989
- journal article
- Published by Elsevier in Journal of Electroanalytical Chemistry and Interfacial Electrochemistry
- Vol. 273 (1-2) , 119-131
- https://doi.org/10.1016/0022-0728(89)87007-x
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Current-doubling, chemical etching and the mechanism of two-electron reduction reactions at GaAsJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1989
- Electron Excitation and Chemical Steps during Anodic Decomposition of n‐GaAs Electrodes: A Hole Injection StudyBerichte der Bunsengesellschaft für physikalische Chemie, 1988
- A study of GaAs etching in alkaline H2O2 solutionsApplied Surface Science, 1987
- Hypochlorite reduction at GaAs: a multifaceted reactionJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1987
- Interaction of deep-ultraviolet laser light with GaAs surfaces in aqueous solutionsJournal of the Optical Society of America B, 1986
- The reduction of iodine at GaAs: the role of potential-redistribution at the semi-conductor/electrolyte interfaceElectrochimica Acta, 1985
- Hole Injection and Electroluminescence of n ‐ GaAs in the Presence of Aqueous Redox ElectrolytesJournal of the Electrochemical Society, 1983
- The n-gallium arsenide electrolyte interface: evidence for specificity in lattice ion-electrolyte interactions, dependence for interfacial potential drops on crystal plane orientation to the electrolyte and implications for solar energy conversionThe Journal of Physical Chemistry, 1983
- On the mechanism of hydrogen evolution at GaAs electrodesJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1981
- Zum Mechanismus der Auflösung von Galliumarsenid durch OxydationsmittelZeitschrift für Physikalische Chemie, 1969