Electron Excitation and Chemical Steps during Anodic Decomposition of n‐GaAs Electrodes: A Hole Injection Study
- 1 October 1988
- journal article
- research article
- Published by Wiley in Berichte der Bunsengesellschaft für physikalische Chemie
- Vol. 92 (10) , 1068-1072
- https://doi.org/10.1002/bbpc.198800274
Abstract
The contribution of electron excitation to the anodic dissolution of the n‐GaAs electrode was studied quantitatively by measuring the increase in the anodic blocking current when hole‐injecting agents such as Ce4+ or Fe(CN)3−6 were added to the electrolyte solution. The experimental relationship between the anodic current and the cathodic hole injection current was interpreted on the basis of the anodic decomposition mechanism, including a chemical step, proposed previously to explain stabilization results. This mechanism is complemented by an electrochemical step involving electron excitation from a decomposition intermediate occurring in parallel to the chemical step.Keywords
This publication has 10 references indexed in Scilit:
- Charge transfer and stabilization at illuminated n-GaAs/aqueous electrolyte junctionsElectrochimica Acta, 1988
- On the role of chemical steps in the anodic dissolution of illuminated n-type GaAs electrodesJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1987
- The role of surface charging and potential redistribution on the kinetics of hole injection reactions at n-GaAsElectrochimica Acta, 1987
- Studies on the n-GaAs Photoanode in Aqueous Electrolytes. 1. Behaviour of the Photocurrent in the Presence of a Stabilizing AgentBerichte der Bunsengesellschaft für physikalische Chemie, 1985
- Charge transfer and corrosion processes at III-V semiconductor/electrolyte interfacesJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1984
- Hole Injection and Electroluminescence of n ‐ GaAs in the Presence of Aqueous Redox ElectrolytesJournal of the Electrochemical Society, 1983
- Study of Stabilization and Surface Recombination on n ‐ GaP Photoelectrodes: Mechanisms and InterrelationJournal of the Electrochemical Society, 1982
- On the electronic current flowing when an n-type AIII Bv semiconductor is dissolvedJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1980
- Zum Mechanismus der Auflösung von Galliumarsenid durch OxydationsmittelZeitschrift für Physikalische Chemie, 1969
- Über den Mechanismus der anodischen Auflösung von GalliumarsenidBerichte der Bunsengesellschaft für physikalische Chemie, 1965