Charge transfer and corrosion processes at III-V semiconductor/electrolyte interfaces
- 1 May 1984
- journal article
- Published by Elsevier in Journal of Electroanalytical Chemistry and Interfacial Electrochemistry
- Vol. 168 (1-2) , 91-100
- https://doi.org/10.1016/0368-1874(84)87091-4
Abstract
No abstract availableThis publication has 32 references indexed in Scilit:
- Chemical passivation of carrier recombination at acid interfaces and grain boundaries of p-indium phosphideThe Journal of Physical Chemistry, 1983
- InP and CdS Photoanodes in Concentrated Aqueous Iodide ElectrolytesJournal of the Electrochemical Society, 1982
- Study of Stabilization and Surface Recombination on n ‐ GaP Photoelectrodes: Mechanisms and InterrelationJournal of the Electrochemical Society, 1982
- 11.5% solar conversion efficiency in the photocathodically protected p-InP/V3+-V2+-HCI/C semiconductor liquid junction cellApplied Physics Letters, 1981
- Investigation of photoelectrochemical corrosion of semiconductors. 1The Journal of Physical Chemistry, 1980
- Light‐Intensity Dependence In The Kinetics Of N‐Gap Photoelectrode StabilizationBulletin des Sociétés Chimiques Belges, 1980
- Surface modification in semiconductor liquid-junction cellsFaraday Discussions of the Chemical Society, 1980
- On the kinetics of semiconductor-electrode stabilizationFaraday Discussions of the Chemical Society, 1980
- Interaction of Light and Transport Control in Semiconductor Based Photoelectrochemical CellsJournal of the Electrochemical Society, 1979
- The Role of Energy Levels in Semiconductor‐Electrolyte Solar CellsJournal of the Electrochemical Society, 1978