Patterned dielectric mirrors for lateral overgrowth of GaN-based lasers.
- 22 May 2001
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 82 (1-3) , 245-247
- https://doi.org/10.1016/s0921-5107(00)00782-0
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laserApplied Physics Letters, 2000
- Blue InGaN-based laser diodes with an emission wavelength of 450 nmApplied Physics Letters, 2000
- Dielectric Bragg Mirrors for InGaN Surface-Emitting LasersPhysica Status Solidi (a), 1999
- Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laserApplied Physics Letters, 1999
- Lasing Emission from an In0.1Ga0.9N Vertical Cavity Surface Emitting LaserJapanese Journal of Applied Physics, 1998
- Dislocation density reduction via lateral epitaxy in selectively grown GaN structuresApplied Physics Letters, 1997
- Refractive index of AlGaInN alloysElectronics Letters, 1996
- Enhanced performance of offset-gain high-barrier vertical-cavity surface-emitting lasersIEEE Journal of Quantum Electronics, 1993