Refractive index of AlGaInN alloys
- 21 November 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (24) , 2285-2286
- https://doi.org/10.1049/el:19961546
Abstract
The refractive index of quaternary nitride alloys is calculated for the transparent ultraviolet to green wavelength range (370–565 nm) by nonlinear interpolation of binary alloy parameters measured. Results given as function of composition for different substrates show strong deviations from linear interpolations.Keywords
This publication has 6 references indexed in Scilit:
- Refractive indices of wurtzite and zincblende GaNElectronics Letters, 1993
- Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al0.1Ga0.9N/GaN Double HeterostructureJapanese Journal of Applied Physics, 1993
- Cathodoluminescence Properties of Undoped and Zn-Doped AlxGa1-xN Grown by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1991
- Preparation and properties of III-V nitride thin filmsJournal of Applied Physics, 1989
- Energy bandgap and lattice constant contours of iii-v quaternary alloys of the form Ax By Cz D or ABx Cy DzJournal of Electronic Materials, 1978
- Fundamental absorption edge in GaN, InN and their alloysSolid State Communications, 1972