Thermal Stability of Pure a-Si Films Prepared by rf-Bias Sputtering
- 1 February 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (2A) , L89
- https://doi.org/10.1143/jjap.21.l89
Abstract
Pure amorphous-silicon (a-Si) films, in which dangling bond terminators such as hydrogen or fluorine are not contained, were prepared using rf-bias sputtering with a magnetron target. The temperature dependence of dark conductivity (σd), photoconductivity (Δσp), ESR spin density (N s) and their variation with annealing were studied. It was found that σd and Δσp were unchanged even after annealing at 500°C, and that the variation of N s with annealing was similar to that of purely fluorinated a-Si (a-Si:F), and much smaller than that of hydrogenated a-Si (a-Si:H).Keywords
This publication has 9 references indexed in Scilit:
- Structural model of sputtered fluorinated amorphous siliconJournal of Applied Physics, 1981
- Effects of rf-Bias on Properties of Sputtered Silicon FilmsJapanese Journal of Applied Physics, 1981
- On the structure of noncrystalline Si and Si1–xHx filmsPhysica Status Solidi (a), 1980
- A heat-resisting new amorphous siliconApplied Physics Letters, 1980
- A Comparison of the Thermal Stabilities of Fluorinated and Hydrogenated Amorphous-SiliconsJapanese Journal of Applied Physics, 1980
- A new amorphous silicon-based alloy for electronic applicationsNature, 1978
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- Use of hydrogenation in structural and electronic studies of gap states in amorphous germaniumPhysical Review B, 1976
- Substitutional doping of amorphous siliconSolid State Communications, 1975