Conductive-oxide-gate FET as a gas sensor
- 1 April 1991
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 3 (4) , 273-277
- https://doi.org/10.1016/0925-4005(91)80017-e
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Structure and morphology of thin SnO2 filmsThin Solid Films, 1990
- New suspended gate FET technology for physical deposition of chemically sensitive layersSensors and Actuators A: Physical, 1990
- Integrated semiconductor gas sensors evaluation with an automatic test systemSensors and Actuators B: Chemical, 1990
- New method for achieving very high sensitivities of MOSFET gas sensorsSensors and Actuators B: Chemical, 1990
- Recognition of hydrogen and ammonia by modified gate metallization of the suspended-gate FETSensors and Actuators B: Chemical, 1990
- Catalytic metals and field-effect devices—a useful combinationSensors and Actuators B: Chemical, 1990
- Surface processes in the detection of reducing gases with SnO2-based devicesSensors and Actuators, 1989
- Tin(IV) oxide gas sensors: thick-film versus metallo-organic based sensorsSensors and Actuators, 1989
- Gas sensors based on catalytic metal-gate field-effect devicesSensors and Actuators, 1986
- The tin oxide gas sensor and its applicationsSensors and Actuators, 1984