Improved uniformity of PtSi Schottky barrier diodes formed using an ion mixing scheme
- 1 January 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (1) , 524-527
- https://doi.org/10.1063/1.345237
Abstract
Low dose ion implantation through the Pt/Si silicon interface prior to annealing has been shown to yield a more planar PtSi/Si interface after annealing. The electrical characteristics of these ion mixed diodes have also been shown to be more uniform from device to device as well as more nearly approaching theoretical performance than conventionally prepared diodes.This publication has 5 references indexed in Scilit:
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