Effects of interface structure on the electrical characteristics of PtSi-Si Schottky barrier contacts
- 1 July 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 93 (3-4) , 331-340
- https://doi.org/10.1016/0040-6090(82)90139-0
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Shallow PtSi-Si Schottky barrier contacts formed by a multilayer metallization techniqueJournal of Applied Physics, 1981
- Reaction of Mo Thin Films on Si (100) SurfacesJournal of the Electrochemical Society, 1980
- Shallow silicide contactJournal of Applied Physics, 1980
- Aluminum-silicide reactions. I. Diffusion, compound formation, and microstructureJournal of Applied Physics, 1979
- PSA-a new approach for bipolar LSIIEEE Journal of Solid-State Circuits, 1978
- Femto Joule logic circuit with enhancement-type Schottky barrier gate FETIEEE Transactions on Electron Devices, 1976
- Effect of junction curvature on breakdown voltage in semiconductorsSolid-State Electronics, 1966