Millimeter Wave Diodes for Harmonic Power Generation
- 1 January 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 15 (1) , 32-37
- https://doi.org/10.1109/tmtt.1967.1126365
Abstract
A discussion of the application of point contact, electrically formed semiconductor junctions to harmonic generating applications is presented. Three different combinations of materials are considered. First, the more popular phosphor-bronze point on gallium arsenide combination is discussed. Results with this material combination when used as millimeter wave multipliers are given as a reference point. The combination n-GaAs/Cu is then examined. The slope parameter of these diodes shows that the junction is very close to that of a Schottky barrier. The conversion efficiency measured for these diodes shows a 2 to 4 dB improvement over the n-GaAs/P-Br diodes. The third combination, and by far the most efficient, was the n-GaAs/Zn diode. These are true p-n junctions (as opposed to Schottky barriers) and have measured zero bias cutoff frequencies on the order of 1000 GHz. The efficiency realized with these diodes in doubling from 70 GHx to 140 GHz typically ranged from 20 percent to 30 percent. The highest output power at 140 GHz that was measured was 16 milliwatts.Keywords
This publication has 13 references indexed in Scilit:
- Millimeter wave semiconductor diode detectors, mixers, and frequency multipliersProceedings of the IEEE, 1966
- A New Microwave Measurement Technique to Characterize Diodes and an 800-Gc Cutoff Frequency Varactor at Zero Volts BiasIEEE Transactions on Microwave Theory and Techniques, 1964
- Au-N-type GaAs Schottky barrier and its varactor applicationIEEE Transactions on Electron Devices, 1963
- A "Goodness" criterion for any varactor diode as a high-order frequency multiplierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1963
- Maximization of the Fundamental Power in Nonlinear Capacitance DiodesBell System Technical Journal, 1962
- Gallium-Arsenide Point-Contact DiodesIEEE Transactions on Microwave Theory and Techniques, 1961
- General power relationships for positive and negative nonlinear resistive elementsProceedings of the IRE, 1958
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957
- Wafer-Type Millimeter Wave Rectifiers*Bell System Technical Journal, 1956
- Some General Properties of Nonlinear Elements-Part I. General Energy RelationsProceedings of the IRE, 1956