Induced Stress-Sensitivity of Ion-Bombarded Silicon-Metal Contacts
- 1 April 1970
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 9 (4) , 406
- https://doi.org/10.1143/jjap.9.406
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Stress Effect of Gold-Doped and Gamma-Irradiated Schottky-Barrier DiodesJapanese Journal of Applied Physics, 1969
- Effect of Surface Polishing on the Stress-Sensitivity of a Schottky-Barrier DiodeJapanese Journal of Applied Physics, 1968
- Ranges of 7.5- to 52-kev , , , and Ions in QuartzPhysical Review B, 1960
- On the permeation of hydrogen and helium in single crystal silicon and germanium at elevated temperaturesPhysica, 1956