Stress Effect of Gold-Doped and Gamma-Irradiated Schottky-Barrier Diodes
- 1 April 1969
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 8 (4) , 502
- https://doi.org/10.1143/jjap.8.502
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Effect of Surface Polishing on the Stress-Sensitivity of a Schottky-Barrier DiodeJapanese Journal of Applied Physics, 1968
- Effect of generation-recombination centers on the stress-dependence of Si p-n junction characteristicsSolid-State Electronics, 1967