Effect of generation-recombination centers on the stress-dependence of Si p-n junction characteristics
- 1 March 1967
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 10 (3) , 213-224
- https://doi.org/10.1016/0038-1101(67)90076-7
Abstract
No abstract availableKeywords
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