Quantization of excitonic polaritons in thin GaAs layers
- 15 June 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 29 (12) , 7058-7061
- https://doi.org/10.1103/physrevb.29.7058
Abstract
Reflectance, excitation, and luminescence spectra at energies near the excitonic resonance of a thin (500 nm) GaAs-AlGaAs double heterostructure are reported. The reflectance data are analyzed by using a dielectric model. Excitation as well as luminescence spectra reveal the properties of discrete polariton states due to quantization.
Keywords
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