Electron irradiation—induced defects inp-type silicon at 80 K
- 1 January 1986
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 47 (12) , 1147-1151
- https://doi.org/10.1016/0022-3697(86)90146-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A bistable defect in electron-irradiated boron-doped siliconJournal of Physics C: Solid State Physics, 1985
- Capacitance Transient SpectroscopyAnnual Review of Materials Science, 1977
- EPR Observation of the Isolated Interstitial Carbon Atom in SiliconPhysical Review Letters, 1976
- EPR of a trapped vacancy in boron-doped siliconPhysical Review B, 1976
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974