A bistable defect in electron-irradiated boron-doped silicon
- 20 February 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (5) , L109-L116
- https://doi.org/10.1088/0022-3719/18/5/002
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Origin of the 0.97 eV luminescence in irradiated siliconPhysica B+C, 1983
- Negative-U Properties for Point Defects in SiliconPhysical Review Letters, 1980
- Carbon interstitial in electron-irradiated siliconSolid State Communications, 1977
- EPR Observation of the Isolated Interstitial Carbon Atom in SiliconPhysical Review Letters, 1976
- EPR of a trapped vacancy in boron-doped siliconPhysical Review B, 1976