Origin of the 0.97 eV luminescence in irradiated silicon
- 28 February 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 116 (1-3) , 258-263
- https://doi.org/10.1016/0378-4363(83)90256-5
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- New model of the irradiation-induced 0.97-eV () line in silicon: AcomplexPhysical Review B, 1981
- Isotope effects on the 969 meV vibronic band in siliconJournal of Physics C: Solid State Physics, 1981
- Time-resolved pulsed DC electroluminescence studies in ZnS:Mn, Cu-powder PhosphorsIEEE Transactions on Electron Devices, 1981
- Uniaxial stress measurements on the 0.97 eV line in irradiated siliconJournal of Physics C: Solid State Physics, 1981
- Erratum: EPR of a Jahn-Teller distorted〈111〉carbon interstitialcy in irradiated siliconPhysical Review B, 1978
- Photoluminescence from Si irradiated with 1.5-MeV electrons at 100 °KJournal of Applied Physics, 1976
- EPR Observation of the Isolated Interstitial Carbon Atom in SiliconPhysical Review Letters, 1976
- EPR of a Jahn-Teller distorted (111) carbon interstitialcy in irradiated siliconPhysical Review B, 1974
- Temperature, stress, and annealing effects on the luminescence from electron-irradiated siliconJournal of Applied Physics, 1973
- Electron irradiation damage in silicon containing carbon and oxygenJournal of Physics and Chemistry of Solids, 1970