Contactless electroreflectance study of a vertically coupled quantum dot-based InAs/GaAs laser structure

23 June 1997

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 70 (25) , 3329-3331
https://doi.org/10.1063/1.119160

Abstract

Contactless electroreflectance, at both 300 and 20 K, has been used to investigate a vertically coupled quantum dot (QD)-based InAs/GaAs laser structure. Signals have been observed from all the relevant portions of the sample including the QDs and wetting layer. The energies of the QD transitions provide evidence for both lateral as well as vertical coupling.

Keywords

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