Optical and Structural Characterization of InAs/GaAs Quantum Wells
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Polarized-cathodoluminescence study of uniaxial and biaxial stress in GaAs/SiPhysical Review B, 1991
- Exciton localization in submonolayer InAs/GaAs multiple quantum wellsPhysical Review B, 1990
- Photoluminescence and stimulated emission from monolayer-thick pseudomorphic InAs single-quantum-well heterostructuresPhysical Review B, 1990
- Misfit dislocations in pseudomorphic In0.23Ga0.77As/GaAs quantum wells: Influence on lifetime and diffusion of excess excitonsJournal of Applied Physics, 1989
- Optical studies of InxGa1−xAs/GaAs strained-layer quantum wellsApplied Physics Letters, 1989
- Electromodulation spectroscopy of confined systemsSuperlattices and Microstructures, 1989
- Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor depositionApplied Physics Letters, 1988
- Temperature dependence of the quantized states in asuperlatticePhysical Review B, 1988
- New normalization procedure for modulation spectroscopyReview of Scientific Instruments, 1987
- Stimulated emission from ultrathin InAs/GaAs quantum well heterostructures grown by atomic layer epitaxyApplied Physics Letters, 1987