Optical studies of InxGa1−xAs/GaAs strained-layer quantum wells

15 May 1989

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 54 (20) , 2026-2028
https://doi.org/10.1063/1.101181

Abstract

Intense single‐peak photoluminescences of free‐exciton origin were observed in In_xGa_1−x As/GaAs strained‐layer quantum wells with x ranging from 0.09 to 0.20. Band lineups in these strained‐layer heterostructures were determined by the dependence of luminescence energy on the well thickness. The heterojunction discontinuity in the heavy hole valence bands was found to be about 30% of the gap difference and independent of x. Exciton‐phonon coupling was determined by temperature‐dependent absorption measurements and the coupling strength was found to be similar to that of unstrained GaAs/Al_xGa_1−x As quantum wells.

Keywords

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