Optical investigation of a new type of valence-band configuration in As-GaAs strained superlattices
- 15 June 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (12) , 8298-8301
- https://doi.org/10.1103/physrevb.31.8298
Abstract
We present optical absorption experiments in strained As-GaAs superlattices grown by molecular-beam epitaxy. From our data, we show that ground heavy- and light-hole states are confined in the As and in the GaAs layers, respectively. We also use a new method to observe the optical selection rules in such two-dimensional structures.
Keywords
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