InAs-GaSb superlattice energy structure and its semiconductor-semimetal transition
- 15 September 1978
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 18 (6) , 2812-2818
- https://doi.org/10.1103/physrevb.18.2812
Abstract
We performed a band calculation, based on the LCAO (linear combination of atomic orbitals) method, for the InAs-GaSb superlattice. Of possible semiconductor combinations the InAs-GaSb is of special interest because of indications that at a heterojunction interface the bottom of the conduction band of InAs lies below the top of the valence band of GaSb. Our results show that the InAs-GaSb superlattice is a semiconductor when the layers of the constituent materials are thin, and becomes a semimetal when the layer thicknesses are increased. The critical InAs thickness for this transition is approximately 115 Å, over which the electrons from the valence band of GaSb "flood" the conduction band of InAs. For the thick-layer limit, we treat the problem in a Fermi-Thomas approximation.Keywords
This publication has 8 references indexed in Scilit:
- Two-dimensional electronic structure in InAs-GaSb superlatticesSolid State Communications, 1978
- In1−xGaxAs-GaSb1−yAsy heterojunctions by molecular beam epitaxyApplied Physics Letters, 1977
- Ge-GaAs (110) Interface: A Self-Consistent Calculation of Interface States and Electronic StructurePhysical Review Letters, 1977
- Electronic structure at an abrupt GaAs–Ge interfaceJournal of Vacuum Science and Technology, 1977
- Elementary theory of heterojunctionsJournal of Vacuum Science and Technology, 1977
- A new semiconductor superlatticeApplied Physics Letters, 1977
- Tight‐binding calculations of the valence bands of diamond and zincblende crystalsPhysica Status Solidi (b), 1975
- Superlattice and Negative Differential Conductivity in SemiconductorsIBM Journal of Research and Development, 1970