Stimulated emission from ultrathin InAs/GaAs quantum well heterostructures grown by atomic layer epitaxy
- 4 May 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (18) , 1266-1268
- https://doi.org/10.1063/1.97879
Abstract
We report the first observation of stimulated emission (16 K) in material grown by atomic layer epitaxy (ALE). The active region of our laser structure consists of six strained InAs quantum wells (6.6 Å thick, 7.4% strain) separated by 500 Å of GaAs, which makes these the thinnest and most highly strained quantum wells ever reported to support stimulated emission. These results demonstrate that the ALE process can be used to grow laser quality material with highly reproducible layer thickness.Keywords
This publication has 8 references indexed in Scilit:
- Ultrathin InAs/GaAs single quantum well structures grown by atomic layer epitaxyApplied Physics Letters, 1986
- High-efficiency carrier collection and stimulated emission in thin (50 Å) pseudomorphic InxGa1−xAs quantum wellsApplied Physics Letters, 1986
- Improved uniformity of epitaxial indium-based compounds by atomic layer epitaxyApplied Physics Letters, 1986
- Self-limiting mechanism in the atomic layer epitaxy of GaAsApplied Physics Letters, 1986
- GaAs Atomic Layer Epitaxy by Hydride VPEJapanese Journal of Applied Physics, 1986
- Molecular Layer EpitaxyJournal of the Electrochemical Society, 1985
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- Window-Heat Sink Sandwich for Optical Experiments: Diamond (or Sapphire)-Semiconductor-Indium SandwichReview of Scientific Instruments, 1971