Surface reconstruction of(0001) investigated by scanning tunneling microscopy
- 15 April 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 51 (16) , 10998-11001
- https://doi.org/10.1103/physrevb.51.10998
Abstract
Epitaxial (√3 × √3 )R30° films were grown on Si(111) by solid-phase epitaxy and examined in situ by ultrahigh-vacuum scanning tunneling microscopy (STM). Atomic resolution was achieved and the (0001) surfaces were found to exhibit a high degree of structural order. Along with recent photoemission work, the analysis of high-resolution STM images shows that the surface atomic arrangement consists basically of a buckled Si layer without vacancies. An additional corrugation reflecting the √3 superstructure in bulk is superimposed on the p(1×1) structure.
Keywords
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