Absorption Edge of GaAs and Its Dependence on Electric Field
- 14 March 1966
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 16 (11) , 444-446
- https://doi.org/10.1103/physrevlett.16.444
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.16.444Keywords
This publication has 10 references indexed in Scilit:
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- Measurement of Optical Absorption in an Electric FieldPhysical Review B, 1965
- Franz-Keldysh Effect above the Fundamental Edge in GermaniumPhysical Review Letters, 1965
- Edge absorption and photoluminescence in closely compensated GaAsSolid State Communications, 1965
- Optical Absorption in an Electric FieldPhysical Review B, 1964
- Optical Absorption in the Presence of a Uniform FieldPhysical Review B, 1963
- Optical Absorption in an Electric FieldPhysical Review B, 1963
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962
- Optical Absorption Edge in GaAs and Its Dependence on Electric FieldJournal of Applied Physics, 1961
- Determination of the Effective Electron Mass in GaAs by the Infra-Red Faraday EffectProceedings of the Physical Society, 1959