Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates
Top Cited Papers
- 8 December 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (23) , 4719-4721
- https://doi.org/10.1063/1.1632537
Abstract
We report on the fabrication of n- ZnO /p- AlGaN heterojunctionlight-emitting diodes on 6H-SiC substrates. Hydride vapor phase epitaxy was used to growp-type AlGaN, while chemical vapor deposition was used to produce the n-type ZnO layers. Diode-like, rectifying I–V characteristics, with threshold voltage ∼3.2 V and low reverse leakage current ∼10 −7 A , are observed at room temperature. Intense ultraviolet emission with a peak wavelength near 389 nm is observed when the diode is forward biased; this emission is found to be stable at temperatures up to 500 K and shown to originate from recombination within the ZnO.Keywords
This publication has 18 references indexed in Scilit:
- Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodesApplied Physics Letters, 2003
- Near-UV emitting diodes based on a transparent p–n junction composed of heteroepitaxially grown p-SrCu2O2 and n-ZnoJournal of Crystal Growth, 2001
- Manifestation of the upper Hubbard band in the electrical conductivity of two-dimensional p-GaAs-AlGaAs structuresSemiconductors, 2001
- Mechanism of the current flow in Pd-(heavily doped p-AlxGa1−x N) ohmic contactSemiconductors, 2001
- Recent advances in ZnO materials and devicesMaterials Science and Engineering: B, 2001
- High temperature excitonic stimulated emission from ZnO epitaxial layersApplied Physics Letters, 1998
- Ultraviolet spontaneous and stimulated emissions from ZnO microcrystallite thin films at room temperatureSolid State Communications, 1997
- Highly conductive and transparent Ga-doped epitaxial ZnO films on sapphire by CVDThin Solid Films, 1995
- Luminescence and EPR of zinc oxide (review)Journal of Applied Spectroscopy, 1992
- High-Power GaN P-N Junction Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1991