Anisotropic Stress Effect of Silicon pn Junctions
- 1 May 1964
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 3 (5)
- https://doi.org/10.1143/jjap.3.256
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- X-Ray Investigation of the Perfection of SiliconJournal of Applied Physics, 1963
- Resistance of Elastically Deformed Shallow p-n JunctionsJournal of Applied Physics, 1962
- X-ray Observation of the Strain Field in Germanium Single Crystals with the Use of the Anomalous TransmissionJournal of the Physics Society Japan, 1959
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957
- Pressure Dependence of the Resistivity of SiliconPhysical Review B, 1955
- Measurement of Minority Carrier Lifetime and Surface Effects in Junction DevicesProceedings of the IRE, 1955
- The Effects of Pressure and Temperature on the Resistance ofJunctions in GermaniumPhysical Review B, 1951
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949