Fabrication of Periodic Structures in GaAs by Focused-Ion-Beam Implantation
- 1 December 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (12R) , 2864-2867
- https://doi.org/10.1143/jjap.29.2864
Abstract
The characteristics of the ion bombardment-enhanced etching for a GaAs substrate using Ga focused-ion-beam implantation and selective etching of HCl have been investigated. The contrast and sensitivity of the etching as a positivetype resist were estimated to be 2.87 and 7.4×1013 cm-2, respectively. The microstructure of a 63 nm period was fabricated by the maskless process.Keywords
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