Surface-superlattice effects in a grating-gate GaAs/GaAlAs modulation doped field-effect transistor
- 28 March 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (13) , 1071-1073
- https://doi.org/10.1063/1.99214
Abstract
We report transport phenomena exhibited by a two-dimensional electron gas at the interface of a modulation doped GaAs/GaAlAs heterostructure in the presence of a field-effect-controlled periodic potential modulation. By means of x-ray lithography and lift-off, a 0.2-μm-period Schottky barrier grating gate was fabricated in lieu of the common continuous gate in a field-effect transistor configuration. Conductance measurements at 4.2 K provide evidence of a superlattice effect.Keywords
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