Microstructure and electronic properties of hydrogenated amorphous silicon-carbon alloys
- 15 June 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (12) , 8257-8258
- https://doi.org/10.1103/physrevb.31.8257
Abstract
Transmission-electron-microscopy observations of glow-discharge hydrogenated amorphous silicon-carbon alloys reveal differences in microstructure as a function of the deposition parameter ratio D [D≡(power density)/pressure]. These observations are correlated with infrared absorption, photoconductivity, and density-of-states measurements on these alloys. The electronic properties appear to depend more on trends in carbon bonding than on the types of microstructure.Keywords
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