Unifying explanation for recent temperature sensitivity measurements of Auger recombination effects in strained InGaAs/InGaAsP quantum-well lasers

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Abstract
Recent temperature sensitivity measurements of Auger recombination effects in compressively strained quantum-well structures, which are seemingly inconsistent, are explained in terms of calculation results from a Monte Carlo analysis. In this analysis, realistic valence subband structures obtained using a 4×4 k⋅p method and Fermi–Dirac statistics are employed, where the conduction-hole-hole-splitoff process is also assumed to be the dominant recombination process. It is found that at low carrier density levels and high temperature—often the conditions under which the Auger recombination coefficient is measured—the temperature sensitivity of the Auger recombination coefficient is expected to be low. A qualitative description of this behavior is also given.