Thin SiO2 films nitrided in N2O
- 31 October 1994
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 25 (7) , 495-500
- https://doi.org/10.1016/0026-2692(94)90033-7
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Effects of N/sub 2/O anneal and reoxidation on thermal oxide characteristicsIEEE Electron Device Letters, 1992
- Highly Reliable Thin Nitrided SiO2 Films Formed by Rapid Thermal Processing in an N2O AmbientJapanese Journal of Applied Physics, 1990