Effects of N/sub 2/O anneal and reoxidation on thermal oxide characteristics
- 1 August 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (8) , 402-404
- https://doi.org/10.1109/55.192772
Abstract
The effects of post-oxidation N/sub 2/O anneal on conventional thermal oxide are studied. The oxide thickness increase resulting from N/sub 2/O anneal is found to be self-limiting and insensitive to initial oxide thickness, which makes the thickness of the resulting oxide easy to control. The N/sub 2/O anneal leads to increased resistance against injection-induced interface-state generation and to reduced hole trapping. No further quality improvement is found when the N/sub 2/O-annealed oxide is subject to an additional reoxidation. This finding confirms that nitrogen incorporation in the absence of hydrogen is responsible for improving the quality of the conventional oxides.Keywords
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