A New Transverse-Mode Stabilized InGaAlP Visible Light Laser Diode Using p-p Isotype Heterobarrier Blocking
- 1 December 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (12A) , L2414
- https://doi.org/10.1143/jjap.27.l2414
Abstract
A new waveguide structure for the InGaAlP transverse-mode stabilized visible laser diode has been successfully fabricated by a two-step MOCVD. A unique current confinement mechanism, using the voltage-drop difference between the isotype heterojunctions of p-GaAs/p-InGaAlP and p-GaAs/p-InGaP/p-InGaAlP was employed in this laser. A low cw threshold current of 40 mA, and a stable fundamental transverse-mode oscillation up to 5 mW were achieved. The oscillation wavelength was 668 nm. The lasers have operated over 1000 hours at 40°C, 3 mW.Keywords
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